Radiation-Hardened Memory

Our radiation-hardened memory products leverage years of expertise in the development of advanced semiconductor technology and packaging approaches to provide memory solutions for the missile defense and space communities.

BAE Systems has developed two complimentary products to address the critical non-volatile memory requirements for missile defense and space systems. The 256Kbit programmable read-only memory  has been on the market for 10 years and uses proven antifuse technology. Our newest product is the 2Mb and 4Mb chalcogenide random access memory (C-RAM^TM) non-volatile RAM. This product uses the chalcogenide phase change material to provide a dense/fast replacement for electrically erasable programmable read-only memory. This enables new applications that were not feasible until now. BAE Systems is now taking orders for engineering- and flight-model parts.

BAE Systems offers a number of options for radiation-hardened static random access memory (SRAM), including a 4Mb radiation tolerant SRAM named Millennium, and a 4Mb radiation-hardened SRAM called Magnum. We have now developed a monolithic 16Mb SRAM. Our L2 Cache/Synchronous SRAM provides unique performance for certain processing architectures, and provides a high performance L2 cache to support the RAD750^® microprocessor.
 

For further information please contact:

Tim Scott
+1 703-367-4615
timothy.scott@baesystems.com